Showing results 6 to 36 of 36
Effect of H and Si impurities on device performance based on HfO 2 gate oxide Kang, J.; Kim, D.Y.; Chang, Kee-Joo, 28th International Conference on the Physics of Semiconductors, ICPS 2006, pp.263 - 264, 2006-07-24 |
Effects of atomic-scale defects on the electronic structure of the Dirac fermions in graphene Chang, Kee-Joo; Ryu, B.; Kang, J.; Bang, J., 한국물리학회 봄 학술논문발표회, 한국물리학회, 2008-04 |
Electron quantum tunneling through ultrathin HfO2 layers Chang, Kee-Joo; Ryu, B.; Kang, J.; Kim, Y.-H., 2007 KPS Falll Meeting, KPS, 2007-10 |
Electronic structure and ferromagnetism of Mn δ-doped GaN Chang, Kee-Joo; Kang, J., The MAR05 Meeting of The American Physical Society, American Physical Society, 2005-03 |
Electronic Structure and Stability of Ferromagnetic GaN doped with Mn(AIP Conference Proceedings, 2005) Chang, Kee-Joo; Kang, J., 27th International Conference on the Physics of Semiconductors, pp.315 - 316, 2004-07 |
Electronic structure and stability of ferromagnetic GaN doped with Mn Kang, J.; Chang, Kee-Joo; Katayama-Yoshida, H., PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, pp.315 - 316, ICPS, 2004-07-26 |
Electronic structure of phosphorous dopants in ZnO Chang, Kee-Joo; Lee, W.-J.; Kang, J., The 23rd International Conference on Defects in Semiconductors, ICDS, 2005-07 |
Electronic structure of single crystalline InGa3(ZnO)m Chang, Kee-Joo; Lee, W.-J.; Choi, E.-A.; Kang, J.; Ryu, B., The 14th International Symposium on the Physics of Semiconductors and Applications, 2008-08 |
Electronic structures of graphene layers on SiO2 surfaces Chang, Kee-Joo; Kang, Y.-J.; Kang, J., The 4th Conference of the Asian Consortium on Computational Materials Science , ACCMS-4, 2007-09 |
First-principles study of boron diffusion in SiGe alloys Chang, Kee-Joo; Bang, J.; Kim, H.; Kang, J.; Lee, W.-J., The 10th Asian Workshop on First-Principles Electronic Structure Calculations, 2007-10 |
First-principles study of direct electron tunneling through ultra-thin SiO_2 Chang, Kee-Joo; Kang, J.; Kim, Y.-H., March 2007 Meeting of the American Physical Society, American Physical Society, 2007-03 |
First-principles study of graphene layers on SiO2 surfaces Chang, Kee-Joo; Kang, Y.-J.; Kang, J., 한국물리학회 가을학술논문발표회, 한국물리학회, 2007-10 |
First-principles Study of the Magnetic Properties of Mn-doped GaN Chang, Kee-Joo; Kang, J., 한국물리학회 봄 학술논문발표회 , pp.96 - 96, 한국물리학회, 2004-04 |
H-related Defects Complexes in HfO2: a Model for Positive Fixed Charge Defects Chang, Kee-Joo; Kang, J.; Lee, E.-C.; Jin, Y.-G., 7th Asian Workshop on First-Principles Electronic Structure Calculations, 2004-11 |
Hydrogen electrochemistry in amorphous SiO2 and at Si-SiO2 interfaces Chang, Kee-Joo; Kang, J., 한국물리학회 가을학술논문발표회 , pp.419 - 419, 한국물리학회, 2005-10 |
Issues and first-principles calculations in Si-based nanoscale devices Chang, Kee-Joo; Kang, J.; Choi, E.-A.; Kim, Y.-H., The 4th Conference of the Asian Consortium on Computational Materials Science , ACCMS-4, 2007-09 |
Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films Jeon, H.C.; Kang, T.W.; Kim, T.W.; Kang, J.; Chang, Kee-Joo, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.400 - 401, IEEE, 2006-10-22 |
Magnetic properties of Co-doped ZnO nanowires Chang, Kee-Joo; Choi, E.-A; Lee, W. J.; Kang, J., The 13th International Conference on II-VI Compounds, 2007-09 |
Mechanism for Acceptor Compensation and Efficient p-type Doping in ZnO Chang, Kee-Joo; Lee, E.-C.; Lee, W.-J.; Kang, J., 27th Korean Vacuum Society Meeting, Korean Vacuum Society, 2004 |
Mechanism for p-type conductance in Mn δ-doped GaN: first-principles study Chang, Kee-Joo; Kang, J., 한국물리학회 봄 학술논문발표회 , pp.197 - 197, 한국물리학회, 2005-04 |
Role of defects on direct electron tunneling through ultra-thin SiO_2 Chang, Kee-Joo; Kang, J.; Bang, J.; Kim, Y.-H., The 24th International Conference on Defects in Semiconductors, 2007-05 |
The Defect Properties of Phosphorus Dopants in ZnO Chang, Kee-Joo; Lee, W.-J.; Kang, J., 7th Asian Workshop on First-Principles Electronic Structure Calculations, 2004-11 |
The effect of Mn ions on the growth of cubic GaN Choi, E.; Kang, J.; Chang, Kee-Joo, 28th International Conference on the Physics of Semiconductors, , pp.21 - 22, ICPS, 2006-07-24 |
The effect of Mn layer on cubic GaN growth Chang, Kee-Joo; Choi, E.-A.; Kang, J., 한국물리학회 가을학술논문발표회 , pp.457 - 457, 한국물리학회, 2005-10 |
The electronic structure of Ga-vacancy in Mn-doped GaN Kang, J.; Chang, Kee-Joo, 34th International Symposium on Compound Semiconductors, ISCS-2007, pp.3035 - 3037, 2007-10-15 |
The electronic structure of graphene layers on SiO2 substrate Chang, Kee-Joo; Kang, Y.-J.; Kang, J., 2008 March Meeting of the American Physical Society, American Physical Society, 2008-03 |
The electronic structure of Si impurities in HfO2 Chang, Kee-Joo; Kim, D.-Y.; Kang, J., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005 |
The magnetic Properties of Mn-based binary compounds Chang, Kee-Joo; Kang, Y.-J.; Hong, H.-M.; Kang, J.; Lee, E.-C., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005 |
The origin of p-type conductivity in Mn δ-doped GaN Chang, Kee-Joo; Kang, J., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005 |
The structural and electronic properties of graphene layers on SiO2 substrates Chang, Kee-Joo; Kang, Y.-J.; Kang, J., The 10th Asian Workshop on First-Principles Electronic Structure Calculations, 2007-10 |
The structural properties of single crystalline InGa3(ZnO)m Chang, Kee-Joo; Lee, W. J.; Choi, E,-A.; Kang, J.; Ryu, B., 한국물리학회 가을학술논문발표회, 한국물리학회, 2008-10 |
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