Showing results 2 to 10 of 10
Migration Pathways and Barriers for B diffusion at Si/SiO2 and SiGe/SiO2 Interface Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08 |
The effect of Al atoms on the effective work function at TiN/HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, The 19th Asian Workshop on First-Principles Electronic Structure Calculations, National Chiao Tung University, 2016-11 |
The effect of Al content on the work function engineering at TiAlN/HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 2015 APS March Meeting, APS, 2015-03 |
The effect of Al doping on effective work function in metal/HfO2 interfaces Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 33rd International Conference on the Physics of Semiconductors, Peking University, 2016-08 |
The effect of Al impurities on the effective work function at metal/HfO2 interfaces Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 2015 28th International Conference on Defects in Semiconductors, ICDS, 2015-07 |
The effect of Si impurities on the effective work function at TiN/t-HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 제12회 고등과학원 전자구조 계산학회, KIAS, 2016-06 |
The effect of Si impurities on the effective work function at TiN/tetragonal-HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, APS March Meeting 2016, American Physics Society, 2016-03 |
The effect of Si impurities on the Schottky barrier height at TiN/tetragonal-HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, The 18th Asian Workshop on First-Principles Electronic Structure Calculations, ISSP, 2015-11 |
The effects of C and F impurities on the Schottky barrier height and effective work function at TiN/HfO2 interface Kim, Geun Myeong; Oh, Young-Jun; Chang, Kee-Joo, The 17th Asian Workshop on First-Principles Electronic Structure Calculations, KIAS, 2014-11-05 |
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