Showing results 1 to 5 of 5
Activation of Group-I Acceptors by Hydrogen Codoping in ZnO Chang, Kee-Joo; Lee, E.-C., 31st International Symposium on Compound Semiconductors, pp.317 - 320, ISCSS, 2004-09 |
Energetics of Various Electrically Deactivating Defects in Heavily n-type Si(AIP Conference Proceedings, 2005) Chang, Kee-Joo; Moon, C.-Y.; Kim, Y.-S.; Lee, E.-C., 27th International Conference on the Physics of Semiconductors, pp.95 - 96, 2004-07 |
H-related Defects Complexes in HfO2: a Model for Positive Fixed Charge Defects Chang, Kee-Joo; Kang, J.; Lee, E.-C.; Jin, Y.-G., 7th Asian Workshop on First-Principles Electronic Structure Calculations, 2004-11 |
Mechanism for Acceptor Compensation and Efficient p-type Doping in ZnO Chang, Kee-Joo; Lee, E.-C.; Lee, W.-J.; Kang, J., 27th Korean Vacuum Society Meeting, Korean Vacuum Society, 2004 |
The magnetic Properties of Mn-based binary compounds Chang, Kee-Joo; Kang, Y.-J.; Hong, H.-M.; Kang, J.; Lee, E.-C., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005 |
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