Showing results 1 to 5 of 5
Characterization of LSCO/Ir and LSCO/Ru structure as diffusion barrier layers for highly integrated memory devices Kim, Il-Doo; Han, KY; Kim, Ho Gi, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.2, pp.11 - 14, 2004-02 |
Dissolution-Induced Surface Roughening and Oxygen Evolution Electrocatalysis of Alkaline-Earth Iridates in Acid![]() Song, Chang Woo; Suh, Hoyoung; Bak, Jumi; Bae, Hyung Bin; Chung, Sung-Yoon, CHEM, v.5, no.12, pp.3243 - 3259, 2019-12 |
Effect of ruthenium on the precipitation of topologically close packed phases in Ni-based superalloys of 3rd and 4th generation Matuszewski, K; Retting, R; Matysiak, H; Peng, Z; Povstugar, I; Choi, Pyuck-Pa; Muller, J; et al, ACTA MATERIALIA, v.95, pp.274 - 283, 2015-08 |
Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate Joo, Dae-Kwon; Park, Jin-Seong; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.3, pp.H77 - H79, 2009 |
Improvement of morphological stability of PEALD-iridium thin films by adopting two-step annealing process Kim, Sung-Wook; Kwon, Se-Hun; Jeong, Seong-Jun; Park, Jin-Seong; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.11, pp.H303 - H305, 2008-09 |
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