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Showing results 1 to 6 of 6

1
Arrayed MoS2-In0.53Ga0.47As van der Waals Heterostructure for High-Speed and Broadband Detection from Visible to Shortwave-Infrared Light

Geum, Dae-Myeong; Kim, Suhyun; Khym, JiHoon; Lim, Jinha; Kim, SeongKwang; Ahn, Seung-Yeop; Kim, Tae Soo; et al, SMALL, v.17, no.17, 2021-04

2
Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric

Bentley, Steven J.; Holland, Martin; Li, Xu; Paterson, Gary W.; Zhou, HP; Ignatova, Olesya; Thoms, Stephen; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496, 2011-04

3
Microstructural and compositional modification of In0.53Ga0.47As/In0.52Al0.48As multiquantum wells using rapid thermal annealing process

Jang, Y. O.; Lee, JeongYong, MATERIALS SCIENCE AND TECHNOLOGY, v.27, no.8, pp.1299 - 1302, 2011-08

4
Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication

Song, JD; Choi, WJ; Lee, JI; Lee, JeongYong, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.32, pp.115 - 118, 2006-05

5
Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; et al, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04

6
The strain relaxation in a lattice-mismatched heterostructure

Lim, YS; Lee, JeongYong; Kim, TW, JOURNAL OF CRYSTAL GROWTH, v.200, no.3-4, pp.421 - 426, 1999-04

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