Browse "MS-Journal Papers(저널논문)" by Subject EPITAXY

Showing results 1 to 44 of 44

1
Applicability of step-coverage Modeling to TiO2 thin films in atomic layer deposition

Kim, Ja-Yong; Kim, Jin-Hyock; Ahn, Ji-Hoon; Park, Pan-Kwi; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.12, pp.H1008 - H1013, 2007

2
Atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Shin, JW; Lee, JeongYong; No, YS; Kim, TW; Choi, WK, JOURNAL OF MATERIALS RESEARCH, v.24, pp.2006 - 2010, 2009-06

3
Atomic layer deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol

Jeon, WS; Yang, S; Lee, CS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.6, pp.306 - 310, 2002-06

4
Atomic layer deposition of nickel by the reduction of preformed nickel oxide

Chae, Junghun; Park, Hyuong-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.5, no.6, pp.C64 - C66, 2002-06

5
Characteristics of ZnO thin films by means of plasma-enhanced atomic layer deposition

Park, Sang-Hee Ko; Hwang, Chi-Sun; Kwack, Ho-Sang; Lee, Jin-Hong; Chu, Hye Yong, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.10, pp.299 - 301, 2006

6
Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Yang, GM, APPLIED PHYSICS LETTERS, v.80, no.8, pp.1370 - 1372, 2002-02

7
Coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs (001) substrates

Lee, HS; Sohn, HS; Lee, JeongYong; Lee, KH; Kim, YH; Kim, TW; Kwon, MS; et al, JOURNAL OF APPLIED PHYSICS, v.99, pp.H61 - H64, 2006-05

8
Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells

Kim, TW; Lee, DU; Choo, DC; Lim, YS; Lee, HS; Lee, JeongYong; Lim, H, SOLID STATE COMMUNICATIONS, v.117, no.8, pp.501 - 504, 2001-02

9
Comparison between ZnO films grown by atomic layer deposition using H2O or O-3 as oxidant

Kim, SK; Hwang, CS; Park, SHK; Yun, SJ, THIN SOLID FILMS, v.478, no.1-2, pp.103 - 108, 2005-05

10
Controlling preferred orientation of ZnO thin films by atomic layer deposition

Park, SHK; Lee, YE, JOURNAL OF MATERIALS SCIENCE, v.39, no.6, pp.2195 - 2197, 2004-03

11
CuAu-I-type ordered structures in InxAl1-xAs epilayers grown on (001) InP substrates

Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.82, pp.2999 - 3001, 2003-05

12
Design and Growth of Quaternary Mg and Ga Codoped ZnO Thin Films with Transparent Conductive Characteristics

Shin, Seung Wook; Kim, In Young; Lee, Gyoung Hoon; Agawane, GL; Mohokar, AV; Heo, Gi-Seok; Kim, Jin Hyeok; et al, CRYSTAL GROWTH DESIGN, v.11, no.11, pp.4819 - 4824, 2011-11

13
Development of transparent conductive Mg and Ga co-doped ZnO thin films: Effect of Mg concentration

Shin, Seung Wook; Agawane, G. L.; Kim, In Young; Jo, Seung Hyun; Kim, Min Sung; Heo, Gi-Seok; Kim, Jin Hyeok; et al, SURFACE & COATINGS TECHNOLOGY, v.231, pp.364 - 369, 2013-09

14
Effect of rapid thermal annealing on the structure and the electrical properties of atomic-layer-deposited Ta2O5 films

Kim, YS; Park, SHK; Yun, SJ; Kang, JS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.975 - 979, 2000-12

15
Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition

Kim, HS; Lee, JeongYong, THIN SOLID FILMS, v.350, no.1-2, pp.14 - 20, 1999-08

16
EFFECT OF SUBSTRATES ON THE GROWTH AND PROPERTIES OF LINBO3 FILMS BY THE SOL-GEL METHOD

Hur, NH; Park, YK; Won, DH; No, Kwangsoo, JOURNAL OF MATERIALS RESEARCH, v.9, no.4, pp.980 - 985, 1994-04

17
Effect of thermal annealing on the microstructural and electrical properties of Al-doped ZnO thin films grown on n-Si (100) substrates

Han, J. H.; No, Y. S.; Lee, JeongYong; Kim, T. W.; Kim, J. Y.; Choi, W. K., PHYSICA E-LOW-DIMENSIONAL SYSTEMS NANOSTRUCTURES, v.43, no.1, pp.256 - 260, 2010-11

18
Effects of thermal annealing on the microstructural properties of the lower region in ZnO thin films grown on n-Si (001) substrates

Yuk, Jong Min; Lee, JeongYong; Kim, TW; Son, DI; Choi, WK, JOURNAL OF MATERIALS RESEARCH, v.23, no.4, pp.1082 - 1086, 2008-04

19
Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

Tabbal, Malek; Kim, Taegon; Woolf, David N.; Shin, Byungha; Aziz, Michael J., APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.98, no.3, pp.589 - 594, 2010-03

20
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

Cho, HK; Lee, JeongYong; Yang, GM; Kim, CS, APPLIED PHYSICS LETTERS, v.79, no.2, pp.215 - 217, 2001-07

21
Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates

Yuk, Jong Min; Lee, Jeong-Yong; No, Y. S.; Kim, T. W.; Choi, W. K., JOURNAL OF APPLIED PHYSICS, v.103, no.8, 2008-04

22
Formation of misfit dislocations and stacking faults in high indium content InxGa1-xN layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.165 - 169, 2001-12

23
High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate

Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD, APPLIED PHYSICS LETTERS, v.90, pp.88 - +, 2007-06

24
Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition

Bae, Si-Young; Jung, Byung Oh; Lekhal, Kaddour; Kim, Sang-Yun; Lee, Jeong Yong; Lee, Dong-Seon; Deki, Manato; et al, CRYSTENGCOMM, v.18, no.9, pp.1505 - 1514, 2016

25
Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient

Park, DJ; Lee, JeongYong; Park, TE; Kim, YY; Cho, HK, THIN SOLID FILMS, v.515, pp.6721 - 6725, 2007-06

26
Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1166 - 1170, 2002-02

27
Interfacial layer properties of HfO2 films formed by plasma-enhanced atomic layer deposition on silicon

Park, PK; Roh, JS; Choi, BH; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.5, pp.F34 - F37, 2006-03

28
Low-Temperature and High-Quality Growth of Bi2O2 Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition

Kang, Minsoo; Chai, Hyun-Jun; Jeong, Han Beom; Park, Cheolmin; Jung, In-young; Park, Eunpyo; Çiçek, Mert Miraç; et al, ACS NANO, v.15, no.5, pp.8715 - 8723, 2021-05

29
Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures

Kim, CS; Hong, YK; Hong, CH; Suh, EK; Lee, HJ; Kim, MH; Cho, HK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.183 - 186, 2001-11

30
Phase separation and stacking fault of InxGa1-xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.220, no.3, pp.197 - 203, 2000-12

31
Step coverage modeling of thin films in atomic layer deposition

Kim, Ja-Yong; Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Jin-Hyock, JOURNAL OF APPLIED PHYSICS, v.101, no.7, 2007-04

32
Strain effects in lattice-mismatched InxGa1-xAs/InyAl1-yAs coupled double quantum wells

Kim, TW; Jung, M; Lee, DU; Lim, YS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.73, no.1, pp.61 - 63, 1998-07

33
Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

Cho, HK; Lee, JeongYong; Leem, JY, APPLIED SURFACE SCIENCE, v.221, pp.288 - 292, 2004-01

34
Superlattice formation of (Ba,Sr)TiO3 prepared by metal-organic chemical vapor deposition

Yoo, DC; Lee, JeongYong, MATERIALS LETTERS, v.47, no.4-5, pp.258 - 261, 2001-02

35
Superlattice-like stacking fault and phase separation of InxGa1-xN grown on sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, APPLIED PHYSICS LETTERS, v.77, no.2, pp.247 - 249, 2000-07

36
Surface morphology and domain structure during the evolution of ZnO nanorods into films

Park, Dong Jun; Lee, JeongYong; Kim, Dong Chan; Cho, Hyung Koun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3, 2009-02

37
SURFACE-ROUGHNESS AND DEFECT MORPHOLOGY IN ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA CLEANED (100)SILICON AT LOW-TEMPERATURES

HWANG, KH; YOON, E; WHANG, KW; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.67, no.24, pp.3590 - 3592, 1995-12

38
Synthesis and enhancement of ultraviolet emission by post-thermal treatment of unique zinc oxide comb-shaped dendritic nanostructures

Manzoor, U; Kim, Do Kyung, SCRIPTA MATERIALIA, v.54, pp.807 - 811, 2006-03

39
Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

Park, DJ; Kim, DC; Lee, JeongYong; Cho, HK, NANOTECHNOLOGY, v.17, pp.5238 - 5243, 2006-10

40
THE EFFECT OF A ZNTE BUFFER LAYER ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF THE CDTE/ZNTE/GAAS STRAINED HETEROSTRUCTURES GROWN BY TEMPERATURE-GRADIENT VAPOR-TRANSPORT DEPOSITION

KIM, TW; PARK, HL; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.67, no.16, pp.2388 - 2390, 1995-10

41
The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films

Min, Jae-Sik; Park, Jin-Seong; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.10, pp.3868 - 3872, 2000-06

42
Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structures during metalorganic chemical vapor deposition

Choi, SC; Song, YH; Jeon, SL; Jang, HJ; Yang, GM; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.4, pp.413 - 415, 2001-04

43
UV photovoltaic cells fabricated utilizing GaN nanorod/Si heterostructures

Li, F.; Lee, S. H.; You, J. H.; Kim, T. W.; Lee, K. H.; Lee, JeongYong; Kwon, Y. H.; et al, JOURNAL OF CRYSTAL GROWTH, v.312, no.16-17, pp.2320 - 2323, 2010-08

44
Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe2 via Tellurization

Choi, Minhyuk; Oh, Saeyoung; Hahn, Sungsoo; Ji, Yubin; Jo, Min-kyung; Kim, Jeongtae; Ju, Tae-Seong; et al, ACS Nano, v.18, no.23, pp.15154 - 15166, 2024-06

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