Atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing
High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin-films showed the domain boundaries of a (01 (1) over bar0) plane with a transition zone and a (01 (1) over bar1) plane without a transition zone. The 30 degrees in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5 degrees in comparison with that of neighboring 30 degrees in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.
- Publisher
- MATERIALS RESEARCH SOC
- Issue Date
- 2009-06
- Language
- English
- Article Type
- Article
- Keywords
ELECTRONIC-STRUCTURE; SAPPHIRE; EPITAXY; DEPOSITION
- Citation
JOURNAL OF MATERIALS RESEARCH, v.24, pp.2006 - 2010
- ISSN
- 0884-2914
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 2 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.