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Browse "MS-Journal Papers(저널논문)" by Author Yoon, Sung Min

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Showing results 1 to 12 of 12

1	Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho, Doo-Hee; Park, Sang-Hee Ko; Byun, Chunwon; Ryu, Min Ki; Yang, Shinhyuk; Hwang, Chi-Sun; Yoon, Sung Min; et al, IEICE TRANSACTIONS ON ELECTRONICS, v.E92C, no.11, pp.1340 - 1346, 2009-11
2	Channel Protection Layer Effect on the Performance of Oxide TFTs Park, Sang-Hee Ko; Cho, Doo-Hee; Yang, Shinhyuk; Ryu, Min Ki; Hwang, Chi-Sun; Yoon, Sung Min; Cheong, Woo-Seok; et al, ETRI JOURNAL, v.31, no.6, pp.653 - 659, 2009-12
3	Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors Bak, Jun Yong; Yoon, Sung Min; Yang, Shinhyuk; Kim, Gi Heon; Park, Sang-Hee Ko; Hwang, Chi-Sun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.4, 2012-07
4	Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In-Ga-Zn-O Thin-Film Transistors Bak, Jun Yong; Yang, Sinhyuk; Ryu, Min Ki; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, ACS APPLIED MATERIALS & INTERFACES, v.4, no.10, pp.5369 - 5374, 2012-10
5	Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors Cheong, Woo-Seok; Lee, Jeong-Min; Yoon, Sung Min; Lee, Jong-Ho; Yang, Shinhyuk; Chung, Sung Mook; Cho, Kyoung Ik; et al, ETRI JOURNAL, v.31, no.6, pp.660 - 666, 2009-12
6	Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer Bak, Jun Yong; Ryu,Min-Ki; Park, Sang-Hee Ko; Hwang,Chi-Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.7, pp.2404 - 2411, 2014-07
7	Light Response of Top Gate InGaZnO Thin Film Transistor Park, Sang-Hee Ko; Ryu, Minki; Yoon, Sung Min; Yang, Shinhyuk; Hwang, Chi-Sun; Jeon, Jae-Hong; Kim, Kyounghwan, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.3, 2011-03
8	Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In-Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures Bak, Jun Yong; Yang, Shinhyuk; Ryu, Ho-Jun; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.79 - 86, 2014-01
9	Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer Bak, Jun Yong; Ryu, Min-Ki; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.357 - 359, 2014-03
10	Properties of MIS capacitors using the atomic-layer-deposited ZnO semiconductor and Al(2)O(3) insulator Song, Jaewon; Oh, Him Chan; Park, Tae Joo; Hwang, Cheol Seong; Park, Sang-Hee Ko; Yoon, Sung Min; Hwangb, Chi-Sun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.11, pp.858 - 863, 2008
11	Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature Cho, Doo-Hee; Yang, Shinhyuk; Byun, Chunwon; Shin, Jaeheon; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, APPLIED PHYSICS LETTERS, v.93, no.14, 2008-10
12	Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide Cho, Doo-Hee; Yang, Shinhyuk; Ryu, Min Ki; Park, Sang-Hee Ko; Byun, Chunwon; Yoon, Sung Min; Chu, Hye-Yong; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.48 - 50, 2009-01

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