Browse "MS-Journal Papers(저널논문)" by Author Rha, SK
Showing results 1 to 14 of 14
| A comparative study on the Si precursors for the atomic layer deposition of silicon nitride thin films Lee, WJ; Lee, JH; Park, Chong-Ook; Lee, YS; Shin, SJ; Rha, SK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.5, pp.1352 - 1355, 2004-11 |
| Characterization of TiN barriers against Cu diffusion by capacitance-voltage measurement Rha, SK; Lee, SY; Lee, WJ; Hwang, YS; Park, Chong-Ook; Kim, DW; Lee, YS; et al, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.16, no.4, pp.2019 - 2025, 1998-01 |
| Copper chemical vapour deposition using copper(I) hexafluoroacetylacetonate trimethylvinylsilane Lee, WJ; Min, JS; Rha, SK; Chun , Soung Soon; Park, Chong-Ook; Kim, DW, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.7, no.2, pp.111 - 117, 1996-04 |
| Effects of the annealing in Ar and H-2/Ar ambients on the microstructure and the electrical resistivity of the copper film prepared by chemical vapor deposition Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook; Chun , Soung Soon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.11, pp.5781 - 5786, 1996-11 |
| Effects of the integrity of silicon thin films on the electrical characteristics of thin dielectric ONO film Kim, DW; Kim, KJ; Kim, DI; Lee, WJ; Lee, SY; Lee, YJ; Rha, SK; et al, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.8, no.2, pp.91 - 94, 1997-04 |
| Effects of the partial pressure of copper (I) hexafluoroacetylacetonate trimethylvinylsilane on the chemical vapor deposition of copper Lee, SY; Rha, SK; Lee, WJ; Kim, DW; Hwang, JS; Park, Chong-Ook, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.36, pp.5249 - 5252, 1997-01 |
| Field-aided thermal chemical vapor deposition of copper using Cu(I) organometallic precursor Lee, WJ; Rha, SK; Lee, SY; Park, Chong-Ook, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.144, no.2, pp.683 - 686, 1997-02 |
| Grain growth of copper films prepared by chemical vapour deposition Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.8, no.4, pp.217 - 221, 1997-08 |
| Improved TiN film as a diffusion barrier between copper and silicon Rha, SK; Lee, WJ; Lee, SY; Hwang, YS; Lee, YJ; Kim, DI; Kim, DW; et al, THIN SOLID FILMS, v.320, no.1, pp.134 - 140, 1998-05 |
| Interdiffusions and reactions in Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO2/Si multilayer structures Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook; Chun, SS, JOURNAL OF MATERIALS RESEARCH, v.12, no.12, pp.3367 - 3372, 1997-12 |
| Investigation of silicon oxide thin films prepared by atomic layer deposition using SiH2Cl2 and O-3 as the precursors Lee, JH; Kim, UJ; Han, CH; Rha, SK; Lee, WJ; Park, Chong-Ook, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, no.3A, pp.L328 - L330, 2004-03 |
| Reflow of copper in an oxygen ambient Lee, SY; Kim, DW; Rha, SK; Park, Chong-Ook; Park, HH, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.16, no.5, pp.2902 - 2905, 1998-01 |
| Structural and chemical stability of Ta-Si-N thin film between Si and Cu Lee, YJ; Suh, BS; Rha, SK; Park, Chong-Ook, THIN SOLID FILMS, v.320, no.1, pp.141 - 146, 1998-05 |
| Texture and sheet resistance of Al alloy thin films on Ti and TiN thin films Lee, WJ; Kim, SJ; Lee, WH; Lee, YJ; Lee, YS; Rha, SK; Park, Chong-Ook, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.15, no.1, pp.9 - 13, 2004-01 |
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