Showing results 5 to 11 of 11
Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors Cho, Sung Haeng; Ryu, Min Ki; Kim, Hee-Ok; Kwon, Oh-Sang; Park, Eun-Sook; Roh, Yong-Suk; Hwang, Chi-Sun; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.9, pp.2126 - 2133, 2014-09 |
Inhibition of abnormal grain growth in BaTiO3 by addition of Al2O3 Fisher, JG; Lee, BK; Choi, SY; Wang, SM; Kang, Suk-Joong L, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v.26, no.9, pp.1619 - 1628, 2006 |
Maximized internal scattering in heterostack Ti3C2Tx MXene/graphene oxide film for effective electromagnetic interference shielding Lee, Gang San; Yoon, Yeo Hoon; Iqbal, Aamir; Kwon, Jisung; Yun, Taeyeong; Sasikala, Suchithra Padmajan; Hassan, Tufail; et al, 2D MATERIALS, v.10, no.3, 2023-07 |
Microstructural characterization at the interface of Al2O3/ZnO/Al2O3 thin films grown by atomic layer deposition Jang, Yong-Woon; Bang, Seok-Hwan; Jeon, Hyeong-Tag; Lee, Jeong-Yong, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.248, no.7, pp.1634 - 1638, 2011-07 |
Room-temperature growth of Cu thin films by nozzle-type partially ionized beam deposition with various acceleration voltages Koh, SK; Yoon, YS; Kim, KH; Jung, HJ; Lee, JeongYong, THIN SOLID FILMS, v.278, no.1-2, pp.45 - 48, 1996-05 |
Strategies and practices for suppressing abnormal grain growth during liquid phase sintering Fisher, John G.; Kang, Suk-Joong L., JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.102, no.2, pp.717 - 735, 2019-02 |
Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06 |
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