DSpace at KOASAS: 고속 열 확산 공정에 의해 형성된 Phosphorus Source/Drain을 갖는 NMOS 트랜지스터의 특성

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

고속 열 확산 공정에 의해 형성된 Phosphorus Source/Drain을 갖는 NMOS 트랜지스터의 특성

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Publisher: 대한전자공학회

Issue Date: 1990-09

Language: Korean

Citation: 전자공학회논문지, pp.1409 - 11418

ISSN: 1975-2377

URI: http://hdl.handle.net/10203/60522

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고속 열 확산 공정에 의해 형성된 Phosphorus Source/Drain을 갖는 NMOS 트랜지스터의 특성

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