INTERMODULATION DISTORTION CHARACTERISTICS OF A SEMICONDUCTOR-LASER AMPLIFIER IN SUBCARRIER MULTIPLEXING
The intermodulation distortion (IMD) characteristics of a subcarrier multiplexed signal in semiconductor laser amplifiers have been calculated. The minimum value of the carrier to the second-order IMD with detuning decreases 3 dB for the amplifier under consideration when the facet reflectivity changes from 10(-4) to 10(-3). In the case of third-order IMD the minimum value of the carrier to IMD ratio with detuning decreases 10 dB for the same change of reflectivity.
- Publisher
- ELSEVIER SCIENCE BV
- Issue Date
- 1992-06
- Language
- English
- Article Type
- Article
- Keywords
SYSTEMS
- Citation
OPTICS COMMUNICATIONS, v.90, no.4-6, pp.255 - 258
- ISSN
- 0030-4018
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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