INTERMODULATION DISTORTION CHARACTERISTICS OF A SEMICONDUCTOR-LASER AMPLIFIER IN SUBCARRIER MULTIPLEXING
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | LEE, SU | ko |
| dc.contributor.author | Shin, Sang Yung | ko |
| dc.date.accessioned | 2013-02-25T05:16:42Z | - |
| dc.date.available | 2013-02-25T05:16:42Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1992-06 | - |
| dc.identifier.citation | OPTICS COMMUNICATIONS, v.90, no.4-6, pp.255 - 258 | - |
| dc.identifier.issn | 0030-4018 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/60154 | - |
| dc.description.abstract | The intermodulation distortion (IMD) characteristics of a subcarrier multiplexed signal in semiconductor laser amplifiers have been calculated. The minimum value of the carrier to the second-order IMD with detuning decreases 3 dB for the amplifier under consideration when the facet reflectivity changes from 10(-4) to 10(-3). In the case of third-order IMD the minimum value of the carrier to IMD ratio with detuning decreases 10 dB for the same change of reflectivity. | - |
| dc.language | English | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.subject | SYSTEMS | - |
| dc.title | INTERMODULATION DISTORTION CHARACTERISTICS OF A SEMICONDUCTOR-LASER AMPLIFIER IN SUBCARRIER MULTIPLEXING | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1992JB84200014 | - |
| dc.identifier.scopusid | 2-s2.0-0026883302 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 90 | - |
| dc.citation.issue | 4-6 | - |
| dc.citation.beginningpage | 255 | - |
| dc.citation.endingpage | 258 | - |
| dc.citation.publicationname | OPTICS COMMUNICATIONS | - |
| dc.contributor.localauthor | Shin, Sang Yung | - |
| dc.contributor.nonIdAuthor | LEE, SU | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | SYSTEMS | - |
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