DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-02-25T04:14:40Z | - |
dc.date.available | 2013-02-25T04:14:40Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-01 | - |
dc.identifier.citation | INTEGRATED FERROELECTRICS, v.4, no.4, pp.371 - 381 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/10203/59763 | - |
dc.language | English | - |
dc.publisher | Taylor & Francis Ltd | - |
dc.title | Preparation of Ferroelectric Thin Film for Si-Based Devices | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-0028135836 | - |
dc.type.rims | ART | - |
dc.citation.volume | 4 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 371 | - |
dc.citation.endingpage | 381 | - |
dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
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