Plasma-Enhanced Chemical Vapor Deposition of Low-Resistive Tungsten Thin Films
Controlling the wafer temperatures from 200 to 500-degrees-C at H-2/WF6 flow ratio equal to 24, low-resistive (about 11-mu-OMEGA-cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy.
- Publisher
- Amer Inst Physics
- Issue Date
- 1991-02
- Language
- English
- Article Type
- Article
- Citation
APPLIED PHYSICS LETTERS, v.58, no.8, pp.837 - 839
- ISSN
- 0003-6951
- Appears in Collection
- Files in This Item
- A1991EZ14200018.pdf(655.5 kB)Download
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