Plasma-Enhanced Chemical Vapor Deposition of Low-Resistive Tungsten Thin Films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Y.T.Kim | ko |
| dc.contributor.author | S.K.Min | ko |
| dc.contributor.author | J.S.Hong | ko |
| dc.contributor.author | Kim, Choong Ki | ko |
| dc.date.accessioned | 2013-02-25T03:39:59Z | - |
| dc.date.available | 2013-02-25T03:39:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1991-02 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, v.58, no.8, pp.837 - 839 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/59565 | - |
| dc.description.abstract | Controlling the wafer temperatures from 200 to 500-degrees-C at H-2/WF6 flow ratio equal to 24, low-resistive (about 11-mu-OMEGA-cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy. | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Plasma-Enhanced Chemical Vapor Deposition of Low-Resistive Tungsten Thin Films | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1991EZ14200018 | - |
| dc.identifier.scopusid | 2-s2.0-0038206273 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 58 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 837 | - |
| dc.citation.endingpage | 839 | - |
| dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
| dc.identifier.doi | 10.1063/1.104505 | - |
| dc.contributor.nonIdAuthor | Y.T.Kim | - |
| dc.contributor.nonIdAuthor | S.K.Min | - |
| dc.contributor.nonIdAuthor | J.S.Hong | - |
| dc.type.journalArticle | Article | - |
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