PERSISTENT PHOTOCONDUCTIVITY DECAY MECHANISM IN COMPENSATED AMORPHOUS-SILICON

Abstract

We studied the effect of band tail carriers on the annealing of metastable persistent photoconductivity(PPC). We created persistent photoconductivity by light illumination on fully compensated amorphous silicon at several temperatures and measured the decay of PPC. The decay behavior fits quite well calculated values introducing a band tail carrier dependent hydrogen diffusion coefficient. It is concluded that the annealing of the PPC is accelerated with the increase in density of band tail carriers.