PERSISTENT PHOTOCONDUCTIVITY DECAY MECHANISM IN COMPENSATED AMORPHOUS-SILICON

Cited 6 time in webofscience Cited 4 time in scopus
  • Hit : 275
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorHYUN, KSko
dc.contributor.authorJANG, Jko
dc.contributor.authorLee, Choochonko
dc.date.accessioned2013-02-25T02:19:11Z-
dc.date.available2013-02-25T02:19:11Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1991-12-
dc.identifier.citationJOURNAL OF NON-CRYSTALLINE SOLIDS, v.137, pp.283 - 286-
dc.identifier.issn0022-3093-
dc.identifier.urihttp://hdl.handle.net/10203/59054-
dc.description.abstractWe studied the effect of band tail carriers on the annealing of metastable persistent photoconductivity(PPC). We created persistent photoconductivity by light illumination on fully compensated amorphous silicon at several temperatures and measured the decay of PPC. The decay behavior fits quite well calculated values introducing a band tail carrier dependent hydrogen diffusion coefficient. It is concluded that the annealing of the PPC is accelerated with the increase in density of band tail carriers.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.titlePERSISTENT PHOTOCONDUCTIVITY DECAY MECHANISM IN COMPENSATED AMORPHOUS-SILICON-
dc.typeArticle-
dc.identifier.wosidA1991GX22700069-
dc.type.rimsART-
dc.citation.volume137-
dc.citation.beginningpage283-
dc.citation.endingpage286-
dc.citation.publicationnameJOURNAL OF NON-CRYSTALLINE SOLIDS-
dc.identifier.doi10.1016/S0022-3093(05)80111-5-
dc.contributor.nonIdAuthorHYUN, KS-
dc.contributor.nonIdAuthorJANG, J-
dc.type.journalArticleArticle; Proceedings Paper-
Appears in Collection
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0