Effects of Thickness, Doping Concentration and Flow Rate of WF6 on the Electrical Resistivity of Tungsten Silicide Films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | C.M.Lee | ko |
| dc.contributor.author | C.S.Han | ko |
| dc.contributor.author | J.G.Lee | ko |
| dc.contributor.author | H.B.Im | ko |
| dc.date.accessioned | 2013-02-25T02:12:44Z | - |
| dc.date.available | 2013-02-25T02:12:44Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.3, pp.410 | - |
| dc.identifier.issn | 3744-4884 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/59023 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Effects of Thickness, Doping Concentration and Flow Rate of WF6 on the Electrical Resistivity of Tungsten Silicide Films | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 3 | - |
| dc.citation.beginningpage | 410 | - |
| dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.contributor.localauthor | H.B.Im | - |
| dc.contributor.nonIdAuthor | C.M.Lee | - |
| dc.contributor.nonIdAuthor | C.S.Han | - |
| dc.contributor.nonIdAuthor | J.G.Lee | - |
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