DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, EG | ko |
dc.contributor.author | Lim, Ho Bin | ko |
dc.date.accessioned | 2013-02-25T01:05:56Z | - |
dc.date.available | 2013-02-25T01:05:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-11 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.138, no.11, pp.3465 - 3469 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/58617 | - |
dc.description.abstract | The microstructure and electrical properties of polysilicon films deposited by low-pressure chemical vapor deposition on silicon dioxide have been investigated as a function of deposition condition and As doping concentration. The deposition temperature was varied from 560-degrees-C to 625-degrees-C, and the As doping concentration from 1 x 10(17) to 5 x 10(20)/cm3. The polysilicon films deposited at 625-degrees-C and annealed at 900-degrees-C have an average grain size of 200-300 angstrom and a rough surface with columnar grain structure, while the films deposited at 560-degrees-C followed by the 900-degrees-C anneal have 1000 angstrom grains and smooth surfaces. For the same As doping concentration, the conductivity and Hall mobility of the polysilicon deposited at 560-degrees-C are larger than those of the polysilicon deposited at 625-degrees-C, due mainly to less grain boundary trapping. The grain boundary potential barrier decreases from 0.063 eV in films with As doping concentration of 5 x 10(18)/cm3 to 0.001 eV in films doped to 2.5 x 10(20)/cm3. The trap density of the grain boundary, however, is almost independent of the deposition conditions and the values are determined to be 3.6-5 x 10(12)/cm2. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | POLYCRYSTALLINE SILICON FILMS | - |
dc.subject | GROWTH | - |
dc.title | EFFECTS OF MICROSTRUCTURE AND AS DOPING CONCENTRATION ON THE ELECTRICAL-PROPERTIES OF LPCVD POLYSILICON | - |
dc.type | Article | - |
dc.identifier.wosid | A1991GN90900054 | - |
dc.type.rims | ART | - |
dc.citation.volume | 138 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 3465 | - |
dc.citation.endingpage | 3469 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.2085435 | - |
dc.contributor.localauthor | Lim, Ho Bin | - |
dc.contributor.nonIdAuthor | LEE, EG | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
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