Effects of Annealing of WSi2 in Polycide Structure Formed by LPCVD Method
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J.H.Lee | ko |
| dc.contributor.author | H.B.Im | ko |
| dc.contributor.author | C.M.Lee | ko |
| dc.date.accessioned | 2013-02-24T14:54:57Z | - |
| dc.date.available | 2013-02-24T14:54:57Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | 전기전자재료학회논문지, v.4, pp.263 | - |
| dc.identifier.issn | 1226-7945 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/58032 | - |
| dc.language | English | - |
| dc.publisher | 한국전기전자재료학회 | - |
| dc.title | Effects of Annealing of WSi2 in Polycide Structure Formed by LPCVD Method | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 4 | - |
| dc.citation.beginningpage | 263 | - |
| dc.citation.publicationname | 전기전자재료학회논문지 | - |
| dc.contributor.localauthor | H.B.Im | - |
| dc.contributor.nonIdAuthor | J.H.Lee | - |
| dc.contributor.nonIdAuthor | C.M.Lee | - |
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