CHEMICAL VAPOR-DEPOSITION OF PBTIO3 FILMS ONTO TIO2-SI

Abstract

Ferroelectric lead titanate thin films were deposited on the TiO2 coated Si(100) substrate by chemical vapour deposition under atmospheric pressure. We have used Pb powder and tetraethyle-orthotitanate[Ti(C2H5O)4] as the source material of Pb and Ti vapour. We investigated the variations of the phase of deposited films with Ti(C2H5O)4 input fractions. When the mole fraction was 0.021, PbTiO3 single phase was obtained. For the other Ti(C2H5O)4 input fractions, we could find PbO solid solutions phase in addition to the PbTiO3 phase. The results of AES analysis revealed that the TiO2 layer on the Si substrate acted as diffusion barriers between Si substrate and PbTiO3 films.