The Effect of Thermal Diffusion of Nitrogen Gas inside Reaction Furnace on Silicon Nitridation Rate
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | H. Kim | ko |
| dc.contributor.author | Kim, Chong Hee | ko |
| dc.date.accessioned | 2013-02-24T12:36:01Z | - |
| dc.date.available | 2013-02-24T12:36:01Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1984 | - |
| dc.identifier.citation | JOURNAL OF MATERIALS SCIENCE LETTERS, v.3, pp.203 - 204 | - |
| dc.identifier.issn | 0261-8028 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57179 | - |
| dc.language | English | - |
| dc.publisher | Chapman and Hall | - |
| dc.title | The Effect of Thermal Diffusion of Nitrogen Gas inside Reaction Furnace on Silicon Nitridation Rate | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 3 | - |
| dc.citation.beginningpage | 203 | - |
| dc.citation.endingpage | 204 | - |
| dc.citation.publicationname | JOURNAL OF MATERIALS SCIENCE LETTERS | - |
| dc.contributor.nonIdAuthor | H. Kim | - |
- Appears in Collection
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.