급속열산화법에 의한 실리콘 산화막의 특성Characteristics of Silicon Oxide Films Grown by Rapid Thermal Oxidation
- Publisher
- 대한전자공학회
- Issue Date
- 1991-12
- Language
- Korean
- Citation
전자공학회지, v.28, no.12, pp.59 - 61
- ISSN
- 1975-2377
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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