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Showing results 1 to 6 of 6

1
A selective growth of III-nitride by MOCVD for a buried-ridge type structure

Yang, M; Cho, M; Kim, C; Yi, J; Jeon, J; Khym, S; Kim, M; et al, JOURNAL OF CRYSTAL GROWTH, v.226, no.1, pp.73 - 78, 2001-06

2
Enhanced optical properties of InGaN MQWs with InGaN underlying layers

Son, JK; Lee, SN; Sakong, T; Paek, HS; Nam, O; Park, Y; Hwang, JS; et al, JOURNAL OF CRYSTAL GROWTH, v.287, pp.558 - 561, 2006-01

3
Excitonic transitions in (Ga1-xMx)N thin films with high Curie temperature

Jeon, HC; Lee, JA; Shon, Y; Lee, SJ; Kang, TW; Kim, TW; Yeo, YK; et al, JOURNAL OF CRYSTAL GROWTH, v.278, pp.671 - 674, 2005-05

4
Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells

Lee, Sung-Nam; Paek, H. S.; Kim, H.; Kim, K. K.; Cho, Yong-Hoon; Jang, T.; Park, Y., JOURNAL OF CRYSTAL GROWTH, v.310, no.16, pp.3881 - 3883, 2008-08

5
Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers

Cho, HK; Lee, KH; Kim, SW; Park, KS; Cho, Yong-Hoon; Lee, JH, JOURNAL OF CRYSTAL GROWTH, v.267, pp.67 - 73, 2004-06

6
Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD

Lee, SN; Son, J; Sakong, T; Lee, W; Paek, H; Yoon, E; Kim, J; et al, JOURNAL OF CRYSTAL GROWTH, v.272, pp.455 - 459, 2004-12

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