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Showing results 1 to 5 of 5

1
Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis

Kim, IJ; Cho, Yong-Hoon; Kim, KS; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490, 1996-06

2
Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate

Cho, Yong-Hoon; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.69, no.24, pp.3740 - 3742, 1996-12

3
DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT

Kim, Kwan‐Shik; Cho, Yong-Hoon; Choe, Byung‐Doo; Jeong, Weon Guk; H. Lim, APPLIED PHYSICS LETTERS, v.67, no.12, pp.1718 - 1720, 1995-09

4
DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN-1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS

Cho, Yong-Hoon; KIM, KS; RYU, SW; KIM, SK; CHOE, BD; LIM, H, APPLIED PHYSICS LETTERS, v.66, no.14, pp.1785 - 1787, 1995-04

5
Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy

Cho, Yong-Hoon; Choe, BD; Kim, Y; Lim, H, JOURNAL OF APPLIED PHYSICS, v.81, no.11, pp.7362 - 7366, 1997-06

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