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Showing results 3 to 5 of 5

3
DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT

Kim, Kwan‐Shik; Cho, Yong-Hoon; Choe, Byung‐Doo; Jeong, Weon Guk; H. Lim, APPLIED PHYSICS LETTERS, v.67, no.12, pp.1718 - 1720, 1995-09

4
DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN-1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS

Cho, Yong-Hoon; KIM, KS; RYU, SW; KIM, SK; CHOE, BD; LIM, H, APPLIED PHYSICS LETTERS, v.66, no.14, pp.1785 - 1787, 1995-04

5
Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy

Cho, Yong-Hoon; Choe, BD; Kim, Y; Lim, H, JOURNAL OF APPLIED PHYSICS, v.81, no.11, pp.7362 - 7366, 1997-06

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