Synthesis and lithographic characterization of poly(N-p-(tert-butoxycarvbonyloxy)phenyl dimethacrylamide) = 폴리(N-파라-(터셔리-부톡시카르보닐옥시)페닐 디메타크릴아미드)의 합성 과및 리소그라피 특성

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In the present work, synthesis and lithographic characteristics of the poly(N-p-(tert-butoxycarbonyloxy)phenyl dimethacrylamide), poly(TBPDMA), which has a cyclic structure in the main chain has been studied. Monomer, N-p-(tert-butoxylcarbonyloxy)phenyl dimethacrylamide was cyclopolymerized in solution when heated with free radical initiator, AIBN (2,2``-azobisisobutyronitrile), yield soluble and fusible polymer that contain practically no unsaturation. The structure of polymer was confirmed by $^1H-NMR$, $^{13}C-NMR$, and FT-IR. The chemical changes of resist system due to deep UV irradiation were performed by using TGA, FT-IR, and UV spectrometer. We obtained 2 $\mum$ line positive image patterns. We knew that the new resist material has desirable properties such as high transparency in deep UV region, facile deprotection, proper sensitivity. Especially this resist material is worthy of notice. This system can be applied to ``Self-development photoresist`` which has not need to develope.
Advisors
Kim, Jin-Baekresearcher김진백researcher
Description
한국과학기술원 : 신소재공학과,
Publisher
한국과학기술원
Issue Date
1997
Identifier
113323/325007 / 000947502
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 1997.2, [ viii, 84 p. ]

Keywords

Poly[N-p-(tert-butoxycarbonyloxy)phenyl dimethacrylamide]; Self-development photoresist; Chemically amplified resist; Photolithography; Cyclopolymerization; 고리화중합; 자발현상성 포토레지스트; 폴리[N-파라-(터셔리-부톡시카르보닐옥시)페닐 디메타크릴아미드]; 화학증폭형 레지스트; 광미세가공

URI
http://hdl.handle.net/10203/51576
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=113323&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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