플라즈마 화학 증착법으로 제조된 P-doped μc-Si:H 박막의 특성Properties of phosphorus-doped μc-Si:H thin films by PECVD
- Advisors
- 임호빈researcher; Im, Ho-Binresearcher
- Description
- 한국과학기술원 : 전자재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1993
- Identifier
- 68557/325007 / 000911463
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 전자재료공학과, 1993.2, [ v, 62 p. ]
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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