플라즈마 화학 증착법으로 제조된 P-doped μc-Si:H 박막의 특성Properties of phosphorus-doped μc-Si:H thin films by PECVD
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 임호빈 | - |
| dc.contributor.advisor | Im, Ho-Bin | - |
| dc.contributor.author | 이정노 | - |
| dc.contributor.author | Lee, Jeong-No | - |
| dc.date.accessioned | 2011-12-15T01:40:18Z | - |
| dc.date.available | 2011-12-15T01:40:18Z | - |
| dc.date.issued | 1993 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=68557&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/51231 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 전자재료공학과, 1993.2, [ v, 62 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.title | 플라즈마 화학 증착법으로 제조된 P-doped μc-Si:H 박막의 특성 | - |
| dc.title.alternative | Properties of phosphorus-doped μc-Si:H thin films by PECVD | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 68557/325007 | - |
| dc.description.department | 한국과학기술원 : 전자재료공학과, | - |
| dc.identifier.uid | 000911463 | - |
| dc.contributor.localauthor | 이정노 | - |
| dc.contributor.localauthor | Lee, Jeong-No | - |
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