금속유기화학기상증착법을 이용한 heavily doped Si 기판에서의 $CoSi_2$ layer의 성장거동 및 접합특성에 관한 연구Growth behavior of $CoSi_2$ layer on heavily doped Si and junction characteristics using metalorganic chemical vapor deposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 안병태 | - |
| dc.contributor.advisor | Ahn, Byung-Tae | - |
| dc.contributor.author | 이희승 | - |
| dc.contributor.author | Lee, Heui-Seung | - |
| dc.date.accessioned | 2011-12-15T01:07:18Z | - |
| dc.date.available | 2011-12-15T01:07:18Z | - |
| dc.date.issued | 2002 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=174572&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/50439 | - |
| dc.description | 학위논문(박사) - 한국과학기술원 : 재료공학과, 2002.2, [ iv, 150 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | 에피 성장 | - |
| dc.subject | 금속유기화학기상증착법 | - |
| dc.subject | heavily doped Si | - |
| dc.subject | 코발트 실리사이드 | - |
| dc.subject | 누설 전류 | - |
| dc.subject | leakage current | - |
| dc.subject | epitaxial growth | - |
| dc.subject | MOCVD | - |
| dc.subject | heavily doped Si | - |
| dc.subject | cobalt silicide | - |
| dc.title | 금속유기화학기상증착법을 이용한 heavily doped Si 기판에서의 $CoSi_2$ layer의 성장거동 및 접합특성에 관한 연구 | - |
| dc.title.alternative | Growth behavior of $CoSi_2$ layer on heavily doped Si and junction characteristics using metalorganic chemical vapor deposition | - |
| dc.type | Thesis(Ph.D) | - |
| dc.identifier.CNRN | 174572/325007 | - |
| dc.description.department | 한국과학기술원 : 재료공학과, | - |
| dc.identifier.uid | 000985311 | - |
| dc.contributor.localauthor | 이희승 | - |
| dc.contributor.localauthor | Lee, Heui-Seung | - |
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- MS-Theses_Ph.D.(박사논문)
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