ECR PECVD법을 이용한 ULSI DRAM Capacitor용 (Pb,La)(Zr,Ti)$O_3$ 박막의 제조 및 특성 평가 연구 = Fabrication and characterization of ECR PECVD (Pb,La)(Zr,Ti)$O_3$ thin films for the charge storage capacitors of ULSI DRAM

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dc.contributor.advisor이원종-
dc.contributor.advisor천성순-
dc.contributor.advisorLee, Won-Jong-
dc.contributor.advisorChun, Soung-Soon-
dc.contributor.author신중식-
dc.contributor.authorShin, Joong-Shik-
dc.date.accessioned2011-12-15T01:03:03Z-
dc.date.available2011-12-15T01:03:03Z-
dc.date.issued1997-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=128165&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/50185-
dc.description학위논문(박사) - 한국과학기술원 : 재료공학과, 1997.8, [ iv, 159 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subject화학증착드-
dc.subject휘발성 불규칙 접근 메모리-
dc.subject케페시터-
dc.subjectPLZT-
dc.subjectElectron cyclotron resonance plasma-
dc.subjectChemical vapor deposition-
dc.subjectDynamic random access memory-
dc.subjectCapacitor-
dc.subject피엘지티-
dc.subject자기공명 플라즈마-
dc.titleECR PECVD법을 이용한 ULSI DRAM Capacitor용 (Pb,La)(Zr,Ti)$O_3$ 박막의 제조 및 특성 평가 연구 = Fabrication and characterization of ECR PECVD (Pb,La)(Zr,Ti)$O_3$ thin films for the charge storage capacitors of ULSI DRAM-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN128165/325007-
dc.description.department한국과학기술원 : 재료공학과, -
dc.identifier.uid000935197-
dc.contributor.localauthor신중식-
dc.contributor.localauthorShin, Joong-Shik-
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