기상유도결정화 및 RTA 공정에 의한 다결정 Si 박막의 제조 및 다결정 Si 박막 트랜지스터 특성에 관한 연구Fabrication of polycrystalline Si films by vapor-induced crystallization and rapid thermal annealing process and characterization of polycrystalline Si thin film transistors

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Advisors
안병태researcherAhn, Byung-Taeresearcher
Description
한국과학기술원 : 신소재공학과,
Publisher
한국과학기술원
Issue Date
2011
Identifier
466406/325007  / 020075102
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2011.2, [ vi, 129 p. ]

Keywords

poly-Si; TFT; RTA; VIC; 박막트랜지스터; 폴리실리콘; 급속열처리; 기상유도결정화

URI
http://hdl.handle.net/10203/49886
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=466406&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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