DSpace at KOASAS: 저온 유도결합 플라즈마 산화에 의한 $Si/SiO_2$ 계면 특성과 박막트랜지스터 특성 변화 연구

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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Theses_Ph.D.(박사논문)

저온 유도결합 플라즈마 산화에 의한 $Si/SiO_2$ 계면 특성과 박막트랜지스터 특성 변화 연구Effects of low-temperature inductively-coupled plasma oxidation on the characteristics of $Si/SiO_2$ interface and thin film transistors

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김보현 / Kim, Bo-Hyun

Advisors: 안병태 researcher; Ahn, Byung-Tae researcher

Description: 한국과학기술원 : 신소재공학과,

Publisher: 한국과학기술원

Issue Date: 2004

Identifier: 237585/325007 / 000995062

Language: kor

Description: 학위논문(박사) - 한국과학기술원 : 신소재공학과, 2004.2, [ xii, 144 p. ]

Keywords: INTERGRAIN SILICON DIOXIDE; OXYNITRIDE; INTERSTITIAL OXYGEN; INDUCTIVELY-COUPLED PLASMA OXIDATION; 박막트랜지스터; 질화산화물; THIN FILM TRANSISTORS; 침입형 산소; 유도결합 플라즈마 산화; 결정립계 실리콘 산화물

URI: http://hdl.handle.net/10203/49780

Link: http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=237585&flag=dissertation

Appears in Collection: MS-Theses_Ph.D.(박사논문)

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저온 유도결합 플라즈마 산화에 의한 $Si/SiO_2$ 계면 특성과 박막트랜지스터 특성 변화 연구Effects of low-temperature inductively-coupled plasma oxidation on the characteristics of $Si/SiO_2$ interface and thin film transistors

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