저온 유도결합 플라즈마 산화에 의한 $Si/SiO_2$ 계면 특성과 박막트랜지스터 특성 변화 연구 = Effects of low-temperature inductively-coupled plasma oxidation on the characteristics of $Si/SiO_2$ interface and thin film transistors

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 294
  • Download : 0
Advisors
안병태researcherAhn, Byung-Taeresearcher
Description
한국과학기술원 : 신소재공학과,
Publisher
한국과학기술원
Issue Date
2004
Identifier
237585/325007  / 000995062
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2004.2, [ xii, 144 p. ]

Keywords

INTERGRAIN SILICON DIOXIDE; OXYNITRIDE; INTERSTITIAL OXYGEN; INDUCTIVELY-COUPLED PLASMA OXIDATION; 박막트랜지스터; 질화산화물; THIN FILM TRANSISTORS; 침입형 산소; 유도결합 플라즈마 산화; 결정립계 실리콘 산화물

URI
http://hdl.handle.net/10203/49780
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=237585&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0