저온 유도결합 플라즈마 산화에 의한 $Si/SiO_2$ 계면 특성과 박막트랜지스터 특성 변화 연구Effects of low-temperature inductively-coupled plasma oxidation on the characteristics of $Si/SiO_2$ interface and thin film transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 안병태 | - |
| dc.contributor.advisor | Ahn, Byung-Tae | - |
| dc.contributor.author | 김보현 | - |
| dc.contributor.author | Kim, Bo-Hyun | - |
| dc.date.accessioned | 2011-12-15 | - |
| dc.date.available | 2011-12-15 | - |
| dc.date.issued | 2004 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=237585&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/49780 | - |
| dc.description | 학위논문(박사) - 한국과학기술원 : 신소재공학과, 2004.2, [ xii, 144 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | INTERGRAIN SILICON DIOXIDE | - |
| dc.subject | OXYNITRIDE | - |
| dc.subject | INTERSTITIAL OXYGEN | - |
| dc.subject | INDUCTIVELY-COUPLED PLASMA OXIDATION | - |
| dc.subject | 박막트랜지스터 | - |
| dc.subject | 질화산화물 | - |
| dc.subject | THIN FILM TRANSISTORS | - |
| dc.subject | 침입형 산소 | - |
| dc.subject | 유도결합 플라즈마 산화 | - |
| dc.subject | 결정립계 실리콘 산화물 | - |
| dc.title | 저온 유도결합 플라즈마 산화에 의한 $Si/SiO_2$ 계면 특성과 박막트랜지스터 특성 변화 연구 | - |
| dc.title.alternative | Effects of low-temperature inductively-coupled plasma oxidation on the characteristics of $Si/SiO_2$ interface and thin film transistors | - |
| dc.type | Thesis(Ph.D) | - |
| dc.identifier.CNRN | 237585/325007 | - |
| dc.description.department | 한국과학기술원 : 신소재공학과, | - |
| dc.identifier.uid | 000995062 | - |
| dc.contributor.localauthor | 김보현 | - |
| dc.contributor.localauthor | Kim, Bo-Hyun | - |
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- MS-Theses_Ph.D.(박사논문)
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