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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er-Er energy migration Kim, In Yong; Shin, JungHoon; Kim, Kyung Joong, APPLIED PHYSICS LETTERS, v.95, no.22, 2009-11 | |
1.54 mu m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide Han, HS; Seo, SY; Shin, JungHoon; Kim, DS, JOURNAL OF APPLIED PHYSICS, v.88, no.4, pp.2160 - 2162, 2000-08 | |
The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering Ji-Hong Jhe; Shin, JungHoon; Kyung Joong Kim; Dae Won Moon, APPLIED PHYSICS LETTERS, v.82, no.25, pp.4489 - 4491, 2003-06 | |
Exciton-erbium coupling and the excitation dynamics of Er3+ in erbium-doped silicon-rich silicon oxide Seo, SY; Shin, JungHoon, APPLIED PHYSICS LETTERS, v.78, no.18, pp.2709 - 2711, 2001-04 |
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