The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering

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The characteristic interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices is investigated. Superlattice thin films consisting of 12 periods of a-Si/SiO2:Er/SiO2/SiO2:Er layers were deposited by ion sputtering and subsequent annealing at 950 degreesC. The dependence of the Er3+ photoluminescence intensity on the thickness of the Er-doped SiO2 layers is well-described by an exponentially decreasing Er-carrier interaction with a characteristic interaction distance of 0.5+/-0.1 nm. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-06
Language
English
Article Type
Article
Keywords

SI/SIO2 SUPERLATTICES; SI NANOCRYSTALS; ENERGY-TRANSFER; POROUS SILICON; LUMINESCENCE; EXCITATION; DEEXCITATION; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; SEMICONDUCTORS

Citation

APPLIED PHYSICS LETTERS, v.82, no.25, pp.4489 - 4491

ISSN
0003-6951
DOI
10.1063/1.1586458
URI
http://hdl.handle.net/10203/83964
Appears in Collection
NT-Journal Papers(저널논문)
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