Results 1-5 of 5 (Search time: 0.006 seconds).
NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering Ji-Hong Jhe; Shin, JungHoon; Kyung Joong Kim; Dae Won Moon, APPLIED PHYSICS LETTERS, v.82, no.25, pp.4489 - 4491, 2003-06 | |
Carrier-induced Er3+ luminescence quenching of erbium-doped silicon-rich silicon oxide Seo, SY; Shin, JungHoon, APPLIED PHYSICS LETTERS, v.75, no.26, pp.4070 - 4072, 1999-12 | |
Influence of sub-nm scale dimensional control on the Er3+ luminescence properties of Er-dopedSi/SiO2 superlattices Jhe, JH; Shin, JungHoon; Ha, YH; Moon, DW, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.176 - 180, 2001-12 | |
Exciton-erbium coupling and the excitation dynamics of Er3+ in erbium-doped silicon-rich silicon oxide Seo, SY; Shin, JungHoon, APPLIED PHYSICS LETTERS, v.78, no.18, pp.2709 - 2711, 2001-04 | |
De-excitation mechanisms of Er3+ in Er-doped hydrogenated amorphous silicon prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition Kim, MJ; Mebratu, GK; Shin, JungHoon, JOURNAL OF NON-CRYSTALLINE SOLIDS, v.332, pp.53 - 59, 2003-12 |
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