(The) electrical and optical properties of Erbium-doped hydrogenated amorphous silicon = 어븀이 도핑된 수소화된 비정질 규소의 전기적 및 광학적 성질

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Great interest lies in hydrogenated amorphous silicon (α-Si:H) as the host matrix for erbium-doped silicon-based semiconductor. But so far, preparation methods used have made it difficult to produce erbium-doped α-Si:H films with the good electrical quality. Here we report on the electrical and optical properties of hydrogenated amorphous silicon deposited and doped with erbium by using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of silane with concurrent sputtering of erbium. A-Si:H without erbium shows photosensitivity greater than $10^5$, demonstrating the good electrical quality. Doping with erbium increases the room temperature conductivity by $10^3$. The activation energy for conductivity also changes from 0.9eV to 0.5eV. Taken together, the data indicate that erbium works as an active dopant. And room temperature photoluminescence at 1.54㎛, due to an intra-4f transition in $Er^{3+}$, is observed. Excitation of $Er^{3+}$ is shown to be mediated by photocarriers.
Advisors
Shin, Jung-Hoonresearcher신중훈researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1998
Identifier
135322/325007 / 000963073
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 1998, [ iv, 45 p. ]

Keywords

Conductivity; Hydrogenated amorphous silicon; Er-doped; Photoluminescence; 광발광; 전기전도도; 수소화된 비정질 규소; 어븀이 도핑된

URI
http://hdl.handle.net/10203/48453
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=135322&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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