(The) electrical and optical properties of Erbium-doped hydrogenated amorphous silicon = 어븀이 도핑된 수소화된 비정질 규소의 전기적 및 광학적 성질

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dc.contributor.advisorShin, Jung-Hoon-
dc.contributor.advisor신중훈-
dc.contributor.authorKim, Mun-Jun-
dc.contributor.author김문준-
dc.date.accessioned2011-12-14T07:54:31Z-
dc.date.available2011-12-14T07:54:31Z-
dc.date.issued1998-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=135322&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/48453-
dc.description학위논문(석사) - 한국과학기술원 : 물리학과, 1998, [ iv, 45 p. ]-
dc.description.abstractGreat interest lies in hydrogenated amorphous silicon (α-Si:H) as the host matrix for erbium-doped silicon-based semiconductor. But so far, preparation methods used have made it difficult to produce erbium-doped α-Si:H films with the good electrical quality. Here we report on the electrical and optical properties of hydrogenated amorphous silicon deposited and doped with erbium by using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of silane with concurrent sputtering of erbium. A-Si:H without erbium shows photosensitivity greater than $10^5$, demonstrating the good electrical quality. Doping with erbium increases the room temperature conductivity by $10^3$. The activation energy for conductivity also changes from 0.9eV to 0.5eV. Taken together, the data indicate that erbium works as an active dopant. And room temperature photoluminescence at 1.54㎛, due to an intra-4f transition in $Er^{3+}$, is observed. Excitation of $Er^{3+}$ is shown to be mediated by photocarriers.eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectConductivity-
dc.subjectHydrogenated amorphous silicon-
dc.subjectEr-doped-
dc.subjectPhotoluminescence-
dc.subject광발광-
dc.subject전기전도도-
dc.subject수소화된 비정질 규소-
dc.subject어븀이 도핑된-
dc.title(The) electrical and optical properties of Erbium-doped hydrogenated amorphous silicon = 어븀이 도핑된 수소화된 비정질 규소의 전기적 및 광학적 성질-
dc.typeThesis(Master)-
dc.identifier.CNRN135322/325007-
dc.description.department한국과학기술원 : 물리학과, -
dc.identifier.uid000963073-
dc.contributor.localauthorKim, Mun-Jun-
dc.contributor.localauthor김문준-
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PH-Theses_Master(석사논문)
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