Study on $SF_6$ gas discharge and its electron temperature control using Zero-D simulation method = 영차원 모델링을 통한 $SF_6$ 가스 방전 및 전자온도 조절에 관한 연구

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As the need for reducing size of semiconductor chips increases, the use of plasmas for manufacturing semiconductor devices becomes more desirable. Thus the design and control of plasma generating chamber is essential for the best fit to our need. Though numerical simulation method is still in its early stage, its importance cannot be underestimated. In this article, volume averaged densities and electron temperature of $SF_6$ gas discharge are studied and the possibility of electron temperature control is tested, in which a negatively biased mesh grid is centered inside the reactive chamber. While the left room has its power source, the right room is supplied only by an energy influx from the electrons passing through the mesh grid whose voltage is manipulated. We observe the electron temperature change of the right room as the grid voltage becomes more negative.
Advisors
Chang, Choong-Seockresearcher장충석researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1996
Identifier
105936/325007 / 000943504
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 1996.2, [ iii, 40 p. ]

Keywords

SF6 discharge; Zero-D modeling; Mesh grid; 전자온도; SF6 방전; 영차원 모델; Electron Temperature

URI
http://hdl.handle.net/10203/48405
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=105936&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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