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Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U-In; et al, APPLIED PHYSICS LETTERS, v.97, no.11, 2010-09 |
Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications Jeon, Sanghun; Kim, Sun Il; Park, Sungho; Song, Ihun; Park, Jaechul; Kim, Sangwook; Kim, Changjung, IEEE ELECTRON DEVICE LETTERS, v.31, no.10, pp.1128 - 1130, 2010-10 |
Persistent photoconductivity in Hf-In-Zn-O thin film transistors Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U-In; et al, APPLIED PHYSICS LETTERS, v.97, no.14, 2010-10 |
Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes Seo, David; Jeon, Sanghun; Seo, Sunae; Song, Ihun; Kim, Changjung; Park, Sungho; Harris, James S.; et al, APPLIED PHYSICS LETTERS, v.97, no.17, 2010-10 |
Highly Transparent and Conductive Al-Doped ZnO/Ag/Al-Doped ZnO Multilayer Source/Drain Electrodes for Transparent Oxide Thin Film Transistors Choi, Kwang-Hyuk; Choi, Yoon-Young; Jeong, Jin-A; Kim, Han-Ki; Jeon, S., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.4, pp.H152 - H155, 2011 |
Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications Jeon, Sanghun; Park, Sungho; Song, Ihun; Hur, Ji-Hyun; Park, Jaechul; Kim, Hojung; Kim, Sunil; et al, ACS APPLIED MATERIALS & INTERFACES, v.3, no.1, pp.1 - 6, 2011-01 |
Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors Lee, Sungsik; Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Jeon, Sanghun; Kim, Changjung; Song, I-Hun; et al, APPLIED PHYSICS LETTERS, v.98, no.20, 2011-05 |
Analysis of interface trap density of metal-oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method Jeon, Sanghun; Park, Sungho, MICROELECTRONIC ENGINEERING, v.88, no.6, pp.872 - 876, 2011-06 |
Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility Jung, Seungjae; Kong, Jaemin; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; Jeon, Sanghun, MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1143 - 1147, 2011-07 |
The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors Kim, Sangwook; Kim, Sunil; Kim, Changjung; Park, JaeChul; Song, Ihun; Jeon, Sanghun; Ahn, Seung-Eon; et al, SOLID-STATE ELECTRONICS, v.62, no.1, pp.77 - 81, 2011-08 |
Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With Sin(x) and SiO2 Gate Dielectrics by Low-Frequency Noise Measurements Choi, Hyun-Sik; Jeon, Sanghun; Kim, Hojung; Shin, Jaikwang; Kim, Changjung; Chung, U-In, IEEE ELECTRON DEVICE LETTERS, v.32, no.8, pp.1083 - 1085, 2011-08 |
Short channel device performance of amorphous InGaZnO thin film transistor Jeon, Sanghun; Benayad, Anass; Ahn, Seung-Eon; Park, Sungho; Song, Ihun; Kim, Changjung; Chung, U-In, APPLIED PHYSICS LETTERS, v.99, no.8, 2011-08 |
Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate Jung, Seungjae; Kong, Jaemin; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics Choi, Hyun-Sik; Jeon, Sanghun; Kim, Hojung; Shin, Jaikwang; Kim, Changjung; Chung, U-In, APPLIED PHYSICS LETTERS, v.99, no.18, 2011-10 |
Three-Dimensional Integration Approach to High-Density Memory Devices Kim, Hojung; Jeon, Sanghun; Lee, Myoung-Jae; Park, Jaechul; Kang, Sangbeom; Choi, Hyun-Sik; Park, Churoo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.11, pp.3820 - 3828, 2011-11 |
A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory Lee, Myoung-Jae; Ahn, Seung-Eon; Lee, Chang Bum; Kim, Chang-Jung; Jeon, Sanghun; Chung, U-In; Yoo, In-Kyeong; et al, ACS APPLIED MATERIALS & INTERFACES, v.3, no.11, pp.4475 - 4479, 2011-11 |
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays Jeon, Sanghun; Ahn, Seung-Eon; Song, Ihun; Kim, Chang Jung; Chung, U-In; Lee, Eunha; Yoo, Inkyung; et al, NATURE MATERIALS, v.11, no.4, pp.301 - 305, 2012-04 |
The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility Choi, Hyun-Sik; Jeon, Sanghun; Kim, Hojung; Shin, Jaikwang; Kim, Changjung; Chung, U-In, APPLIED PHYSICS LETTERS, v.100, no.17, 2012-04 |
Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays Ahn, Seung-Eon; Song, Ihun; Jeon, Sanghun; Jeon, Youg Woo; Kim, Young; Kim, Changjung; Ryu, Byungki; et al, ADVANCED MATERIALS, v.24, no.19, pp.2631 - 2636, 2012-05 |
In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed TiOx Jung, Seungjae; Kong, Jaemin; Kim, Tae-Wook; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; et al, IEEE ELECTRON DEVICE LETTERS, v.33, no.6, pp.869 - 871, 2012-06 |
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