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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.38, 2018-09 | |
Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing Goh, Youngin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.113, no.5, 2018-07 | |
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Goh, Youngin; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.33, 2018-08 |
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