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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Ahn, Jae-Hyuk; Kim, Dong-Hyun; Choi, Kyu-Jin; Cho, Byung-Jin; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; Oh, Jae-Sub; Song, Myeong-Ho; Park, Yuri-Chang; Kim, Jeoung-Woo; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647, 2009-04 | |
| Nonvolatile Memory by All-Around-Gate Junctionless Transistor Composed of Silicon Nanowire on Bulk Substrate Choi, Sung-Jin; Moon, Dong-Il; Kim, Sung-Ho; Ahn, Jae-Hyuk; Lee, Jin-Seong; Kim, Jee-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.5, pp.602 - 604, 2011-05 | |
| Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.2902 - 2906, 2010-11 | |
| Refinement of Unified Random Access Memory Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; Oh, Jae-Sub; Song, Meyong-Ho; Lee, Gi-Sung; Park, Yuri-Chang; Kim, Jeoung-Woo; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04 | |
| Fin Width (W-fin) Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.71 - 73, 2010-01 | |
| Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM) Han, Jin-Woo; Ryu, Seong-Wan; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.2, pp.189 - 191, 2009-02 | |
| Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11 | |
| P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Kim, Sung-Ho; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.8, pp.1737 - 1742, 2010-08 | |
| Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells Kim, Moon-Seok; Choi, Sung-Jin; Moon, Dong-Il; Duarte, Juan P.; Kim, Sung-Ho; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.79, pp.7 - 10, 2013-01 | |
| Improvement of the Sensing Window on a Capacitorless 1T-DRAM of a FinFET-Based Unified RAM Choi, Sung-Jin; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3228 - 3231, 2009-12 |
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