Search
Results 1-10 of 38 (Search time: 0.005 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| A Compact Model of Quantum Electron Density at the Subthreshold Region for Double-Gate Junctionless Transistors Duarte, Juan Pablo; Kim, Moon-Seok; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.4, pp.1008 - 1012, 2012-04 | |
| Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.106, no.5, 2009-09 | |
| Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.97, no.9, pp.092108, 2010-08 | |
| Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric Yeo, CC; Cho, Byung Jin; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05 | |
| Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12 | |
| Analysis and Evaluation of a BJT-Based 1T-DRAM Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.5, pp.393 - 395, 2010-05 | |
| Ballistic quantum transport in nanoscale Schottky-barrier tunnel transistors Ahn, C; Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.5, no.3, pp.278 - 283, 2006-05 | |
| Electron mobility enhancement using ultrathin pure Ge on Si substrate Yeo, CC; Cho, Byung Jin; Gao, E; Lee, SJ; Lee, AH; Yu, CY; Liu, CW; Tang, LJ; Lee, TW, IEEE ELECTRON DEVICE LETTERS, v.26, no.10, pp.761 - 763, 2005-10 | |
| Three-dimensional quantum simulation of multigate nanowire field effect transistors Shin, Mincheol, MATHEMATICS AND COMPUTERS IN SIMULATION, v.79, no.4, pp.1060 - 1070, 2008-12 | |
| Efficient simulation of silicon nanowire field effect transistors and their scaling behavior Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.101, no.2, pp.43 - 46, 2007-01 |
Discover