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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Moores law lives on - Ultra-thin body SOI and FinFET CMOS transistors look to continue Moores law for many years to come Chang, LL; Choi, Yang-Kyu; Kedzierski, J; Lindert, N; Xuan, PQ; Bokor, J; Hu, CM; King, TJ, IEEE CIRCUITS DEVICES, v.19, no.1, pp.35 - 42, 2003-01 | |
| Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era Choi, Yang-Kyu; King, TJ; Hu, CM, SOLID-STATE ELECTRONICS, v.46, no.10, pp.1595 - 1601, 2002-10 | |
| Sub-50 nm p-channel FinFET Huang, XJ; Lee, WC; Kuo, C; Hisamoto, D; Chang, LL; Kedzierski, J; Anderson, E; Takeuchi, H; Choi, Yang-Kyu; Asano, K; Subramanian, V; King, TJ; Bokor, J; Hu, CM, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.880 - 886, 2001-05 | |
| Ultrathin-body SOI MOSFET for deep-sub-tenth micron era Choi, Yang-Kyu; Asano, K; Lindert, N; Subramanian, V; King, TJ; Bokor, J; Hu, CM, IEEE ELECTRON DEVICE LETTERS, v.21, no.5, pp.254 - 255, 2000-05 | |
| Extremely scaled silicon nano-CMOS devices Chang, LL; Choi, Yang-Kyu; Ha, DW; Ranade, P; Xiong, SY; Bokor, J; Hu, CM; King, TJ, PROCEEDINGS OF THE IEEE, v.91, no.11, pp.1860 - 1873, 2003-11 | |
| A spacer patterning technology for nanoscale CMOS Choi, Yang-Kyu; King, TJ; Hu, CM, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.49, no.3, pp.436 - 441, 2002-03 | |
| Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor Kim, Sung-Ho; Choi, Sung-Jin; Jang, Moon-Gyu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08 | |
| Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors Choi, Sung-Jin; Han, Jin-Woo; Jang, Moon-Gyu; Choi, Chel-Jong; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.8, 2009-08 | |
| Sub-60-nm quasi-planar FinFETs fabricated using a simplified process Lindert, N; Chang, LL; Choi, Yang-Kyu; Anderson, EH; Lee, WC; King, TJ; Bokor, J; Hu, CM, IEEE ELECTRON DEVICE LETTERS, v.22, no.10, pp.487 - 489, 2001-10 |