Browse "EE-Journal Papers(저널논문)" by Subject interface states
Showing results 1 to 7 of 7
| Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films Jeong, Hu Young; Lee, JeongYong; Choi, Sung-Yool, APPLIED PHYSICS LETTERS, v.97, no.4, 2010-07 |
| HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer Maeng, W. J.; Gu, Gil Ho; Park, C. G.; Lee, Kayoung; Lee, Taeyoon; Kim, Hyungjun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.G109 - G113, 2009 |
| Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride Lee, Kayoung; Liu, En-Shao; Watanabe, Kenji; Taniguchi, Takashi; Nah, Junghyo, ACS APPLIED MATERIALS & INTERFACES, v.10, no.48, pp.40985 - 40989, 2018-12 |
| Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions Chong, PF; Cho, Byung Jin; Chor, EF; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2181 - 2185, 2000-04 |
| Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor Kim, Sung-Ho; Choi, Sung-Jin; Jang, Moon-Gyu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08 |
| Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots Lee, JI; Nam, HD; Choi, WJ; Yu, BY; Song, JD; Hong, Songcheol; Noh, SK; et al, CURRENT APPLIED PHYSICS, v.6, no.6, pp.1024 - 1029, 2006-10 |
| Parasitic S/D resistance effects on hot-carrier reliability in body-tied FinFETs Han, JW; Lee, CH; Park, D; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.27, no.6, pp.514 - 516, 2006-06 |
Discover
Open Access
- 573 OA Article
Date issued
- 1,929 2020 - 2024
- 5,086 2010 - 2019
- 4,213 2000 - 2009
- 2,379 1990 - 1999
- 665 1980 - 1989