Browse "EE-Journal Papers(저널논문)" by Subject LAYERS
Showing results 1 to 29 of 29
| A GAAS FLOATED ELECTRON CHANNEL FIELD-EFFECT TRANSISTOR (FECFET) FABRICATED BY SELECTIVE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION KIM, CT; HONG, CH; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.30, no.12B, pp.3828 - 3832, 1991-12 |
| A modulus-engineered multi-layer polymer film with mechanical robustness for the application to highly deformable substrate platform in stretchable electronics Kim, Youson; Kim, Junmo; kim, chanyoung; Kim, Taehyun; Lee, Chungryeol; Jeong, Kihoon; Jo, Woosung; et al, CHEMICAL ENGINEERING JOURNAL, v.431, no.2, 2022-03 |
| A study on doping density in InAs/GaAs quantum dot infrared photodetector Lee, UH; Kang, YH; Oum, JH; Lee, SJ; Kim, M; Noh, SK; Jang, YD; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.8A, pp.5199 - 5203, 2004-08 |
| A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs Guan, H; Li, MF; He, YD; Cho, Byung Jin; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08 |
| Concentration dependent electron distributions in heavily Si-doped GaAs Lee, NY; Kim, Jae Eun; Park, Hae Yong; Kwak, DH; Lee, Hee Chul; Lim, H, SOLID STATE COMMUNICATIONS, v.99, no.8, pp.571 - 575, 1996-08 |
| Conduction mechanism under quasibreakdown of ultrathin gate oxide He, YD; Guan, H; Li, MF; Cho, Byung Jin; Dong, Z, APPLIED PHYSICS LETTERS, v.75, no.16, pp.2432 - 2434, 1999-10 |
| Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier Zang, H.; Lee, S. J.; Loh, W. Y.; Wang, J.; Chua, K. T.; Yu, M. B.; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.2, pp.161 - 164, 2008-02 |
| Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs) Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09 |
| Dependence of hydrogen and oxygen incorporation on deposition parameters in photochemical vapor deposited mercury free silicon nitride films Sahu, BS; Srivastava, P; Agnihotri, OP; Lee, Hee Chul; Sekhar, BR; Mahapatra, S, THIN SOLID FILMS, v.446, pp.23 - 28, 2004-01 |
| Dramatic improvement of performance of visible hydrogenated amorphous silicon carbide based p-i-n thin-film light-emitting diodes by two-step hydrogenation Lee, JW; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.69, no.4, pp.547 - 549, 1996-07 |
| Electrical and photocurrent properties of a polycrystalline Sn-doped beta-Ga2O3 thin film Yoon, Youngbin; Kim, Sunjae; Lee, In Gyu; Cho, Byung Jin; Hwang, Wan Sik, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.121, 2021-01 |
| Electron-beam irradiation-induced gate oxide degradation Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6731 - 6735, 2000-12 |
| Enhanced Device Performance of Germanium Nanowire Junction less (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment Yoon, Young Gwang; Kim, Tae Kyun; Hwang, In-Chan; Lee, Hyun-Seung; Hwang, Byeong Woon; Moon, Jung-Min; Seo, Yu Jin; et al, ACS APPLIED MATERIALS & INTERFACES, v.6, no.5, pp.3150 - 3155, 2014-03 |
| Ex situ hydrogen passivation effect of visible p-i-n type thin-film light-emitting diode characteristics Lee, JW; Lim, Koeng Su, JOURNAL OF APPLIED PHYSICS, v.81, no.5, pp.2432 - 2436, 1997-03 |
| Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide Guan, H; Cho, Byung Jin; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05 |
| Giant Frictional Drag in Double Bilayer Graphene Heterostructures Lee, Kayoung; Xue, Jiamin; Dillen, David C.; Watanabe, Kenji; Taniguchi, Takashi; Tutuc, Emanuel, PHYSICAL REVIEW LETTERS, v.117, no.4, 2016-07 |
| Graphene as anode electrode for colloidal quantum dots based light emitting diodes Klekachev, Alexander V.; Kuznetsov, Sergey N.; Asselberghs, Inge; Cantoro, Mirco; Mun, Jeong-Hun; Cho, Byung-Jin; Stesmans, Andre L.; et al, APPLIED PHYSICS LETTERS, v.103, no.4, 2013-07 |
| Highly Reliable Charge Trap-Type Organic Non-Volatile Memory Device Using Advanced Band-Engineered Organic-Inorganic Hybrid Dielectric Stacks Kim, Min Ju; Lee, Changhyeon; Shin, Eui Joong; Lee, Tae In; Kim, Seongho; Jeong, Jaejoong; Choi, Junhwan; et al, ADVANCED FUNCTIONAL MATERIALS, v.31, no.41, 2021-10 |
| Hydrogenation time dependence of a-SiC:H-based P-I-N thin film visible light-emitting diode characteristics Lee, JW; Lim, Koeng Su, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.35, no.9A, pp.1111 - 1113, 1996-09 |
| Investigation of quasi-breakdown mechanism through post-quasi-breakdown thermal annealing Loh, WY; Cho, Byung Jin; Li, MF, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.5A, pp.2873 - 2877, 2002-05 |
Low-Thermal-Budget Doping of 2D Materials in Ambient Air Exemplified by Synthesis of Boron-Doped Reduced Graphene Oxide Cha, Jun-Hwe; Kim, Dong-Ha; Park, Cheolmin; Choi, Seon-Jin; Jang, Ji-Soo; Yang, Sang Yoon; Kim, Il-Doo; et al, ADVANCED SCIENCE, v.7, no.7, pp.1903318, 2020-04 |
| MOCVD Growth of Hierarchical Nanostructured MoS2: Implications for Reactive States as the Large-Area Film Park, Cheolmin; Shim, Gi Woong; Hong, Woonggi; Choi, Sung-Yool, ACS APPLIED NANO MATERIALS, v.6, no.10, pp.8981 - 8989, 2023-05 |
| Novel Vapor-Phase Synthesis of Flexible, Homogeneous Organic-Inorganic Hybrid Gate Dielectric with sub 5 nm Equivalent Oxide Thickness 김민주; Pak, Kwanyong; Hwang, Wan Sik; Im, Sung Gap; Cho, Byung Jin, ACS APPLIED MATERIALS & INTERFACES, v.10, no.43, pp.37326 - 37334, 2018-10 |
| Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C<sub>60</sub>/C<sub>70</sub>:TAPC Hybrid Channel Choi, Dongho; Kwon, Hyukyun; Lee, Haechang; Lee, Kyu-Myung; Park, Yongsup; Moon, Hanul; Yoo, Seunghyup, ACS APPLIED MATERIALS & INTERFACES, v.15, no.50, pp.58673 - 58682, 2023-12 |
| SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; et al, NATURE MATERIALS, v.17, no.4, pp.335 - +, 2018-04 |
| Significance of gate oxide thinning below 1.5 nm on 1/f noise behavior in n-channel metal-oxide-semiconductor field-effect transistors under electrical stress Mheen, B; Kim, M; Song, YJ; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4943 - 4947, 2006-06 |
| Solution-based nanostructure to reduce waveguide and surface plasmon losses in organic light-emitting diodes Kim, Do-Hong; Kim, Jin-Yeong; Kim, Dong-Young; Han, Jun Hee; Choi, Kyung-Cheol, ORGANIC ELECTRONICS, v.15, no.11, pp.3183 - 3190, 2014-11 |
| Stability enhancement of normal-geometry organic solar cells in a highly damp condition: A study on the effect of top electrodes Han, Donggeon; Lee, Hyunwoo; Jeong, Seonju; Lee, Jongjin; Lee, Jung-Yong; Yoo, Seunghyup, Organic Electronics, v.25, pp.31 - 36, 2015-10 |
| Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating Yoon, Seong Jun; Pak, Kwanyong; Taewook Nam; Yoon, Alexander; Kim, Hyungjun; Im, Sung Gap; Cho, Byung Jin, ACS NANO, v.11, no.8, pp.7841 - 7847, 2017-08 |
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