Polycrystalline n-type beta-Ga2O3 thin films with a thickness of 100 nm are demonstrated via the sputtering process followed by the spin-on-glass Sn-doping technique. The thin films are used as an active layer for power electronics and ultraviolet optoelectronics. In the present study, they are implemented in back-gated metal-oxide semiconductor field-effect transistors with a 300-nm thick SiO2 gate dielectric. The fabricated device shows typical power electronic properties with high breakdown voltages (as high as 216 V). The device also shows a clear photoresponse to the 254-nm light illuminations, indicating that the polycrystalline beta-Ga2O3 thin film is also suitable for solar-blind photodetectors.