Browse "EE-Journal Papers(저널논문)" by Subject FERROELECTRICITY
Showing results 1 to 5 of 5
| A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology Jung, Minhyun; Gaddam, Venkateswarlu; Jeon, Sanghun, NANO CONVERGENCE, v.9, no.1, pp.1 - 18, 2022-10 |
| High Pressure Microwave Annealing Effect on Electrical Properties of Hf (x) Zr1-x O Films near Morphotropic Phase Boundary Jung, Minhyun; Kim, Chaeheon; Hwang, Junghyeon; Kim, Giuk; Shin, Hunbeom; Gaddam, Venkateswarlu; Jeon, Sanghun, ACS APPLIED ELECTRONIC MATERIALS, v.5, no.9, pp.4826 - 4835, 2023-08 |
| Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM Yoon, Jae Seok; Tewari, Amit; Shin, Changhwan; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079, 2019-07 |
| Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; Jung, Minhyun; Kim, Chaeheon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09 |
| Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01 |
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